High NA EUV optics: preparing the next major lithography step

Paul Graeupner; Daniel Golde; Jan van Schoot; Peter Kuerz; Judon Stoeldraijer

doi:10.1117/12.2658370

30 April 2023 High NA EUV optics: preparing the next major lithography step

Paul Graeupner, Daniel Golde, Jan van Schoot, Peter Kuerz, Judon Stoeldraijer

Proceedings Volume PC12494, Optical and EUV Nanolithography XXXVI; PC1249405 (2023) https://doi.org/10.1117/12.2658370
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

In recent years the promise of EUV lithography became a high-volume-manufacturing reality and is currently the main enabler for the latest generations of chips we all know and use. To enable the future generations of chips, with smaller feature sizes ZEISS and ASML are developing a new generation of EUV tools, with an increased NA from the current 0.33 to 0.55 allowing the lithographers to print 8nm half-pitch in a single exposure. In this presentation we will remind briefly on high-NA optics concepts as compared to its 0.33-NA predecessor. We will give insight into how advanced the current production status at ZEISS is: not only into mirror surface polishing, coating, metrology, but also mirror handling and integration as well as shipment. Moreover, besides what happens in high-NA program, you will also see the current status and ongoing improvements to 0.33-NA optics.

Conference Presentation

Citation Download Citation

Paul Graeupner, Daniel Golde, Jan van Schoot, Peter Kuerz, and Judon Stoeldraijer "High NA EUV optics: preparing the next major lithography step", Proc. SPIE PC12494, Optical and EUV Nanolithography XXXVI, PC1249405 (30 April 2023); https://doi.org/10.1117/12.2658370

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