CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12886 > Article
Presentation
9 March 2024 Progress in UV-C laser diode development
Maki Kushimoto
Author Affiliations +
Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860P (2024) https://doi.org/10.1117/12.3000430
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
AlGaN-based UV-C laser diodes (LDs) are expected to be applied to various applications as a low-cost, environmentally friendly, and highly efficient laser light source. Although it has been difficult to realize DUV LDs due to problems with AlGaN crystals, we have achieved pulsed lasing at room temperature (R.T.) by improving crystal quality and demonstrating hole injection technology based on polarized doping technology. Furthermore, by suppressing process-induced dislocations and improving optical confinement, the threshold gain and drive voltage were improved, and continuous-wave lasing of a UV-C laser at R.T. with a threshold current density of 4.2 kA/cm2 and a threshold voltage of 8.7 V was successfully achieved.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Maki Kushimoto "Progress in UV-C laser diode development", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860P (9 March 2024); https://doi.org/10.1117/12.3000430
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Semiconductor lasers
Laser development
Aluminum gallium nitride
Crystals
Laser damage threshold
Continuous wave operation
Deep ultraviolet
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top