AlGaN-based UV-C laser diodes (LDs) are expected to be applied to various applications as a low-cost, environmentally friendly, and highly efficient laser light source. Although it has been difficult to realize DUV LDs due to problems with AlGaN crystals, we have achieved pulsed lasing at room temperature (R.T.) by improving crystal quality and demonstrating hole injection technology based on polarized doping technology. Furthermore, by suppressing process-induced dislocations and improving optical confinement, the threshold gain and drive voltage were improved, and continuous-wave lasing of a UV-C laser at R.T. with a threshold current density of 4.2 kA/cm2 and a threshold voltage of 8.7 V was successfully achieved.
AlGaN-based UVC laser diodes operating at wavelengths are expected to be a low-cost, environmentally friendly, and highly efficient laser light source for a variety of applications. In this study, we further reduced the threshold gain by improving the optical confinement and improved the threshold current density while lowering drive voltage. A threshold current density of 2.8 kA/cm2 was achieved in pulsed current operation, and an operating voltage as low as 9.6 V was also achieved. Furthermore, the packaged device successfully emits CW light at a wavelength of 274.8 nm with a DC current operation of over 110 mA at 5°C.
To reduce the operating voltage, we analyzed the p–n junction of an aluminum gallium nitride (AlGaN) homojunction Tunnel Junction (TJ) deep-ultraviolet light-emitting diode using phase-shifting electron holography. We obtained a phase image reflecting the band alignment of the p–n homojunction and derived a depletion layer width of approximately 10 nm. We found the AlGaN homojunction TJ forms a p-n junction. Furthermore, the operating voltage reached 8.8 V at 63 A cm-2 by optimizing the structural characteristics of the AlGaN TJ, such as the thickness and impurity concentration, where the thickness of the TJ was 23 nm. We found that the TJ thickness should be at least the same as the depletion layer width at the AlGaN TJ.
Deep-ultraviolet laser diodes have achieved pulsed lasing at room temperature by improving the crystal quality and establishing a hole injection method using polarization doping techniques. In the initial demonstration, the threshold current density was very high at 25kA/cm2, which is a major barrier to continuous-wave lasing. The reason for this high threshold current density was found to be process-induced non-uniformity of emission. By suppressing this non-uniformity through LD device design, we were able to significantly reduce the threshold current density to about 12 kA/cm2.
The aim of this paper is the definition of a model for the degradation of an AlGaN-based ultraviolet (UV) Light Emitting Diode (LED) with a nominal wavelength of 285 nm (UV-C). These devices are widely used in disinfection, sterilization, water purification, medical devices, in plant lighting and as insect traps; moreover, UV antiviral treatments are being developed recently, under the push of the current COVID-19 emergency. We analyzed the behavior of the devices during a constant current stress at the current of 250 mA, through electrical (I-V), optical (L-I) and spectral (PSD) measurements and steady state photocapacitance (SSPC) analysis. By investigating the optical measurements, we found out the presence of two different degradation mechanisms, one before 1000 min of stress and one after 1000 min of stress. We ascribed the first one to a decrease in the injection efficiency and we modeled it with a system of three differential rate equations to describe the dynamics of the de-hydrogenation of gallium vacancies, that lead to a defects generation. On the other hand, the second degradation mechanism is well correlated to the generation of midgap defects (Ec-2.15 eV), as detected from the SSPC analysis, that indicates the generation of non-radiative centers induced by the stress.
UV-C laser diodes (LDs) have not been realized for many years owing to the problems of crystal quality and p-type conductivity control. In our group, AlGaN-based LD structures with low dislocation density were fabricated using AlN single-crystal substrates, and a p-type cladding layer with sufficient hole concentration was realized without impurities doped by distributed polarization doping (DPD). As a result, we have demonstrated pulsed current injection UV-C LDs at room temperature. We have also developed an on-wafer process technology to solve the problems of LDs manufactured by the conventional cleavage method. The key points of this method are the flatness of mirror facets, their angle to the cavity, and the coating of distributed Bragg reflector (DBR) on the mirror facets formed perpendicular to the wafer. The method is a combination of dry etching and TMAH wet etching to selectively expose the m-plane, and the DBR fabrication by atomic layer deposition (ALD) which provides good coverage. The LDs fabricated by the on-wafer method were observed to lase in the UV-C region when a pulsed current was injected similarly to the LDs fabricated by the cleavage method. These results indicate the potential of not only the realization of UV-C LDs but also for the fabrication of devices using high-Al-composition AlGaN with p-type conductivity and optical integrated circuits.
AlGaN-based UltraViolet Light Emitting Diodes (UV LEDs) are promising devices for replacing the conventional UV lamps, which contain toxic substances like mercury, in order to have smaller devices, lower operating voltage and the possibility of tuning the emission wavelength by changing the Al and Ga content in the alloy. However, UV-LEDs may suffer from a relatively fast degradation of electrical and optical characteristics, that can be due to the generation of defects that increase the Shockley-Read-Hall (SRH) recombination components. The aim of this paper is to study the behavior of UV-B LEDs submitted to a constant current stress, through electrical, optical and spectral characterization, and capacitance deep-level transient spectroscopy (C-DLTS). The results of this analysis demonstrate that UV-B LEDs show a decrease in the driving voltage, probably correlated with the increased activation of the Mg dopant, and an increase in subthreshold forward current, ascribed to the generation of mid-gap defects caused by the stress. We also found a strong optical degradation at low current levels, that indicates the increase in SRH recombination, probably due to the increased density of mid-gap defects. To investigate on the origin of the defects, we carried out C-DLTS measurements; the results indicate the presence of Mg-related defects and/or intrinsic defects related to the GaN growth. Moreover, after stress we notice the appearance of a peak that is strictly related to the increase of mid-gap defects generated during the stress.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.