Material considerations for current and next generation microbolometer technology

A. J. Syllaios; M. S. Harcrow; B. J. Western; V. C. Lopes; C. L. Littler; Ray Gunawidjaja; Zhi-Gang Yu

doi:10.1117/12.2303728

14 May 2018 Material considerations for current and next generation microbolometer technology

A. J. Syllaios, M. S. Harcrow, B. J. Western, V. C. Lopes, C. L. Littler, Ray Gunawidjaja, Zhi-Gang Yu

Proceedings Volume 10656, Image Sensing Technologies: Materials, Devices, Systems, and Applications V; 106560E (2018) https://doi.org/10.1117/12.2303728
Event: SPIE Commercial + Scientific Sensing and Imaging, 2018, Orlando, FL, United States

Abstract

Electrical conduction in materials used in microbolometer technology, such as vanadium oxide (VOx) and amorphous silicon (a-Si), is via carrier hopping between localized states. The hopping conduction parameters determine the temperature coefficient of resistance (TCR), its temperature dependence, and its relationship to resistivity. The electrical noise has a 1/f component that is also associated to the hopping parameters and thus correlated to TCR. Current research on conduction in cross linked metal nanoparticles organized in an insulating matrix shows that TCR and noise can be controlled independently, potentially allowing for precise tailoring of the detector response for differing applications.

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A. J. Syllaios, M. S. Harcrow, B. J. Western, V. C. Lopes, C. L. Littler, Ray Gunawidjaja, and Zhi-Gang Yu "Material considerations for current and next generation microbolometer technology", Proc. SPIE 10656, Image Sensing Technologies: Materials, Devices, Systems, and Applications V, 106560E (14 May 2018); https://doi.org/10.1117/12.2303728

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