Lateral collection structure for planar type InGaAs infrared detector

Honghai Deng; Zhiliang Wang; Jing Huang; Xue Li; Haimei Gong

doi:10.1117/12.2505680

12 December 2018 Lateral collection structure for planar type InGaAs infrared detector

Honghai Deng, Zhiliang Wang, Jing Huang, Xue Li, Haimei Gong

Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 1084637 (2018) https://doi.org/10.1117/12.2505680
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China

Abstract

This article presents the fabrication of the front-illuminated planar type InGaAs infrared detector based on the lateral collection structure. The detector with the cutoff wavelength 1.7μm was fabricated on the NIN-type InP/InGaAs/InP hetero-structure materials with sealed-ampoule method using Zn₃P₄ as the diffusion source. And the detector with the dimension of 460μm×1000μm consists of four lateral collection regions and the width of each region is 15μm. Furthermore, the electrical properties and photo response characteristics were investigated between detectors with the lateral collection structure and normal structure. The Laser beam induced current (LBIC) map shows that the photoresponse of lateral collection InGaAs detector at 296 K is quite uniform and the photoresponse signals generated in the lateral collection regions are the same as them in PN junction regions. The lateral collection regions disappear from view since the electron/hole pairs generated in the regions are all collected by the electrical field of depletion region. It turns out that the average peak detectivity and the density of dark current of the detectors with lateral collection structure and normal structure is 3.22×10¹² cm·Hz^1/2/W and 3.00×10¹² cm·Hz^1/2/W, 4.85 nA/cm² and 22 nA/cm² at -100 mV respectively. Therefore, the lateral collection structure could substantially reduce the dark current by 70% compared with the normal structure.

Citation Download Citation

Honghai Deng, Zhiliang Wang, Jing Huang, Xue Li, and Haimei Gong "Lateral collection structure for planar type InGaAs infrared detector", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 1084637 (12 December 2018); https://doi.org/10.1117/12.2505680

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