Paper
15 March 2019 Formation features and electrophysical properties of ferroelectric films ZnO study
A. O. Zotov, A. A. Perevalov, V. I. Shevyakov, A. N. Belov
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221D (2019) https://doi.org/10.1117/12.2521973
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
The work is devoted to the study of the formation of zinc oxide films in four different ways: by magnetron sputtering, deposition from the gas phase, by dip-coating, and by atomic layer deposition. The effect of alloying additives of subsequent thermal annealing on the morphology and electrical conductivity of the films obtained is reflected. It has been established that the smallest roughness of films is obtained when films are deposited by atomic layer deposition.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. O. Zotov, A. A. Perevalov, V. I. Shevyakov, and A. N. Belov "Formation features and electrophysical properties of ferroelectric films ZnO study", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221D (15 March 2019); https://doi.org/10.1117/12.2521973
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KEYWORDS
Zinc oxide

Sputter deposition

Oxygen

Argon

Heat treatments

Resistance

Annealing

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