Paper
24 November 2021 Modelling effects of GaN HEMTs terahertz detectors with spiral antennas
Zhen Huang, Wei Yan, Zhaofeng Li, Hui Dong, Fuhua Yang, Xiaodong Wang
Author Affiliations +
Proceedings Volume 12061, AOPC 2021: Infrared Device and Infrared Technology; 120610F (2021) https://doi.org/10.1117/12.2603258
Event: Applied Optics and Photonics China 2021, 2021, Beijing, China
Abstract
We report on the two modelling effects of energy transmission and electric field enhancement of GaN high electron mobility transistor (HEMT) terahertz (THz) detectors integrated with spiral antennas. The models proposed in this paper not only explain the two different coupling methods applicable to THz detection, but also make comparisons between them. The computing results indicate that although the two methods are coupling with THz wave in different ways, the efficiency of improving the responsivity of THz detectors is almost the same. The conclusions in this paper exhibit the excellent application prospects in THz detection and imaging.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhen Huang, Wei Yan, Zhaofeng Li, Hui Dong, Fuhua Yang, and Xiaodong Wang "Modelling effects of GaN HEMTs terahertz detectors with spiral antennas", Proc. SPIE 12061, AOPC 2021: Infrared Device and Infrared Technology, 120610F (24 November 2021); https://doi.org/10.1117/12.2603258
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