We report on the two modelling effects of energy transmission and electric field enhancement of GaN high electron mobility transistor (HEMT) terahertz (THz) detectors integrated with spiral antennas. The models proposed in this paper not only explain the two different coupling methods applicable to THz detection, but also make comparisons between them. The computing results indicate that although the two methods are coupling with THz wave in different ways, the efficiency of improving the responsivity of THz detectors is almost the same. The conclusions in this paper exhibit the excellent application prospects in THz detection and imaging.
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