Research on on-resistance of 4H-SiC photoconductive switch

Jiyang Shang; Haiyang Ding; Pei Li; Yan Luo; Kexin Song; Yu Zhang; Tao Yuan; Chongbin Yao

doi:10.1117/12.2603993

13 December 2021 Research on on-resistance of 4H-SiC photoconductive switch

Jiyang Shang, Haiyang Ding, Pei Li, Yan Luo, Kexin Song, Yu Zhang, Tao Yuan, Chongbin Yao

Proceedings Volume 12074, 10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Novel Optoelectronic Functional Materials and Devices; 120740A (2021) https://doi.org/10.1117/12.2603993
Event: Tenth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2021), 2021, Chengdu, China

Abstract

A coplanar photoconductive switch based on vanadium-nitrogen doped 4H-SiC bulk material was developed. The test results show that the combination of vanadium doping and coplanar electrode structure, the voltage capability of 4H-SiC photoconductive switch is significantly improved and the conductive resistance of 4H-SiC photoconductive switch under low light intensity is reduced. The bias voltage of 4H-SiC photoconductive switch is 10kV. The conductive resistance of 4H-SiC photoconductive switch excited by 0.5mJ 532nm laser is 21Ω. In the conjugate matching link, the ouput peak power on the load is 0.3MW. The conductive resistance of 4H-SiC photoconductive switch excited by 2.5mJ 532nm laser is less 1Ω. In the conjugate matching link, the ouput peak power on the load is 6.25MW. The results show that the developed vanadium-nitrogen doped 4H-SiC photoconductive switch has the characteristics of stable output waveform, small jitter and high power. Low conductive resistance can be obtained at low light intensify. The developed vanadium-nitrogen doped 4H-SiC photoconductive switch has certain application value.

Citation Download Citation

Jiyang Shang, Haiyang Ding, Pei Li, Yan Luo, Kexin Song, Yu Zhang, Tao Yuan, and Chongbin Yao "Research on on-resistance of 4H-SiC photoconductive switch", Proc. SPIE 12074, 10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Novel Optoelectronic Functional Materials and Devices, 120740A (13 December 2021); https://doi.org/10.1117/12.2603993

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