Research on response property of 4H-SiC photoconductive switches with the same-side electrode structure

Haiyang Ding; Jiyang Shang; Pei Li; Tao Yuan; Kexin Song; Yan Luo; Chongbin Yao

doi:10.1117/12.2603992

13 December 2021 Research on response property of 4H-SiC photoconductive switches with the same-side electrode structure

Haiyang Ding, Jiyang Shang, Pei Li, Tao Yuan, Kexin Song, Yan Luo, Chongbin Yao

Author Affiliations +

Proceedings Volume 12074, 10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Novel Optoelectronic Functional Materials and Devices; 120740B (2021) https://doi.org/10.1117/12.2603992
Event: Tenth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2021), 2021, Chengdu, China

Abstract

A photoconductive switch with 4H-SiC as the substrate material and the same-side electrode structure is developed. The test results show that when using a hundred picosecond laser pulse as the trigger source, the device can achieve an ultra-short electrical pulse response of hundred picoseconds, that is, it can output Gigahertz-level wide-spectrum signal. Through the experimental circuit built, under the condition of certain bias voltage and light pulse width, the pulse width of the electrical signal is tested when the energy of the light pulse changes within the range of 0.3-4.4 mJ. The experimental results show that the stronger the energy of the irradiated light pulse, the wider the pulse width of the response electrical signal of this switch.

Citation Download Citation

Haiyang Ding, Jiyang Shang, Pei Li, Tao Yuan, Kexin Song, Yan Luo, and Chongbin Yao "Research on response property of 4H-SiC photoconductive switches with the same-side electrode structure", Proc. SPIE 12074, 10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Novel Optoelectronic Functional Materials and Devices, 120740B (13 December 2021); https://doi.org/10.1117/12.2603992

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