ArF excimer laser activation of Mg-doped GaN small area mesa device

Maria Emma Villamin; Ronel Christian Roca; Itaru Kamiya; Naotaka Iwata

doi:10.1117/12.3002082

8 March 2024 ArF excimer laser activation of Mg-doped GaN small area mesa device

Maria Emma Villamin, Ronel Christian Roca, Itaru Kamiya, Naotaka Iwata

Proceedings Volume 12886, Gallium Nitride Materials and Devices XIX; 128860F (2024) https://doi.org/10.1117/12.3002082
Event: SPIE OPTO, 2024, San Francisco, California, United States

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Abstract

In this study, ArF laser activation annealing of an Mg-doped GaN four-point probe small mesa device is investigated. Fabricated mesa device has 2-μm-high small mesa structures with In/Au contacts formed using standard semiconductor device process. In our setup, the ArF excimer laser was directed onto the sample using a series of mirrors and was focused through an aspheric lens to the sample, which is mounted on to a movable stage. The mesa device and the laser were aligned while being viewed on the computer monitor screen using a UV CCD camera. The dependence of the resistivity to the laser fluence and irradiation time were investigated by multiple-irradiation measurement cycles to a single mesa device. Results reveal that laser annealing at 530 mJ/cm² for 25 min (at 150 Hz repetition rate) decreases the resistivity from 11.5 (before irradiation) to 5.6 Ω·cm (after irradiation). This value is comparable to resistivity achieved by RTA at 800 ◦C for 2 min, suggesting successful Mg-doped GaN activation.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Maria Emma Villamin, Ronel Christian Roca, Itaru Kamiya, and Naotaka Iwata "ArF excimer laser activation of Mg-doped GaN small area mesa device", Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX, 128860F (8 March 2024); https://doi.org/10.1117/12.3002082

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