Nonlinear optics on deuterated silicon-rich nitride devices

Dawn T. H. Tan; Xavier X. Chia; Hongwei Gao; George F. R. Chen; Doris K. T. Ng

doi:10.1117/12.3005292

12 March 2024 Nonlinear optics on deuterated silicon-rich nitride devices

Dawn T. H. Tan, Xavier X. Chia, Hongwei Gao, George F. R. Chen, Doris K. T. Ng

Proceedings Volume 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII; 128890C (2024) https://doi.org/10.1117/12.3005292
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Silicon-rich nitride (SRN) devices provide higher optical nonlinearity than stoichiometric silicon nitride. Their growth using CMOS-compatible chemical vapor deposition allows their composition to be tunable. Conventional SRN typically utilizes silane gas which introduces absorption overtones at the 1.55μm wavelength region. As is also the case with stoichiometric silicon nitride, high temperature annealing can be used to reduce Si-H based absorption. An alternate approach towards eliminating Si-H absorption is by replacing silane gas with deuterated silane. The substitution of Si-H with Si-D induces a blue shift in the wavenumber of the bond absorption, thus removing the absorption overtone at the telecommunications region. Consequently, deuterated SRN provides lower material losses compared to non-deuterated SRN, while providing a design degree of freedom for tailoring its linear and nonlinear refractive indices. We present the material properties for deuterated SRN and its application towards linear and nonlinear photonic devices. We demonstrate improved device losses when deuterated SRN is used compared to non-deuterated SRN. We further quantify the optical properties and nonlinearity of grown films and demonstrate low power parametric wavelength conversion in deuterated SRN ring resonators.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Dawn T. H. Tan, Xavier X. Chia, Hongwei Gao, George F. R. Chen, and Doris K. T. Ng "Nonlinear optics on deuterated silicon-rich nitride devices", Proc. SPIE 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, 128890C (12 March 2024); https://doi.org/10.1117/12.3005292

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