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As the cell size of memory devices continues to shrink, tighter On-Product Overlay (OPO) specifications toward a 1nm OPO budget are required. EUV (extreme ultraviolet lithography) production was adopted in 2019 and the next lithography development known as High NA EUV will fulfill market demand beyond 5nm and 3nm process nodes. High NA EUV requires shrinking the scribe line from 50μm to 40μm, which results in new requirements for the target size to be smaller than the current size μDBO (16x16μm) and AIM (24x24μm) targets. The reduction in the scribe line is certainly beneficial to chipmakers for wafer real estate and yield. For metrology measurements in high-volume manufacturing (HVM), the main optical overlay (OVL) metrology usually uses imaging-based overlay (IBO) technology, while in other cases diffraction-based overlay (DBO) and scatterometry-based overlay (SCOL) are used. All methods (IBO, DBO, and SCOL) face the same challenge of target size reduction. For instance, IBO targets require a restricted number of grating bars. Most importantly, the smaller the target size, the less kernel information affects measurement quality. The spot size of DBO is larger than the target size, so it increases noise sources from the target's surroundings and affects the OVL accuracy. SCOL technology offers several advantages over IBO and DBO when measuring small targets since the spot size in SCOL is smaller and the spot navigation has a higher control mechanism. In this paper, we present a method called parallax to measure a single-cell overlay using pupil information. We will demonstrate three values: First, the target size can be reduced by up to half. Second, the measurement time is improved by saving navigation time from cell to cell. Third, the optical z-value for each point is reported along with OVL measurements. Additionally, the feasibility of single-cell OVL measurement and optical z-value is demonstrated as KPIs for process control.
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