Low global warming C5F10O isomers for plasma atomic layer etching and reactive ion etching of SiO2 and Si3N4

Jihye Kim; Hojin Kang; Yongsun Cho; Junsik Hong; Heeyeop Chae

doi:10.1117/12.3014577

10 April 2024 Low global warming C₅F₁₀O isomers for plasma atomic layer etching and reactive ion etching of SiO₂ and Si₃N₄

Jihye Kim, Hojin Kang, Yongsun Cho, Junsik Hong, Heeyeop Chae

Author Affiliations +

Proceedings Volume 12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII; 129580S (2024) https://doi.org/10.1117/12.3014577
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Plasma atomic layer etching (ALE) for SiO₂ and Si₃N₄ and reactive ion etching (RIE) for SiO₂ with hole-patterns were developed using C₄F₈ and the low global warming potential gases of perfluoroisopropyl vinyl ether (PIPVE) and perfluoropropyl vinyl ether (PPVE). The ALE windows of SiO₂ and Si₃N₄ were in the range of 50.0-57.5 V for all precursors. Etch per cycle of SiO₂ was determined to be 5.5Å /cycle (C₄F₈), 3.3Å /cycle (PIPVE), and 5.4Å /cycle (PPVE), all lower than that of Si₃N₄. PPVE reduced global warming emissions by 49%, demonstrating better vertical etch profiles in RIE compared to C₄F₈.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Jihye Kim, Hojin Kang, Yongsun Cho, Junsik Hong, and Heeyeop Chae "Low global warming C₅F₁₀O isomers for plasma atomic layer etching and reactive ion etching of SiO₂ and Si₃N₄", Proc. SPIE 12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, 129580S (10 April 2024); https://doi.org/10.1117/12.3014577

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