Laser processing of germanium

Valentin Craciun; Ion N. Mihailescu; Armando Luches; S. G. Kiyak; G. N. Mikhailova

doi:10.1117/12.48954

1 March 1991 Laser processing of germanium

Valentin Craciun, Ion N. Mihailescu, Armando Luches, S. G. Kiyak, G. N. Mikhailova

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48954
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Thermal treatments a key process for IC technologies face large difficulties in case of germanium due to the poor chemical stability of germanium oxides i. e. GeO and Ge02. Laser processing allows for a drastically reduction of the interaction time highly suitable for Ge processing. We report two applications: i) the laser synthesis of thin and stable germanium oxynitrides films and ii) the laser doping of germanium with boron to the view of obtaining very shallow junctions.

Citation Download Citation

Valentin Craciun, Ion N. Mihailescu, Armando Luches, S. G. Kiyak, and G. N. Mikhailova "Laser processing of germanium", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48954

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