Fast proximity correction with zone sampling

John P. Stirniman; Michael L. Rieger

doi:10.1117/12.175423

17 May 1994 Fast proximity correction with zone sampling

John P. Stirniman, Michael L. Rieger

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175423
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Proximity effects cause integrated circuit features to be distorted when compared to the original mask pattern. These effects are becoming widely recognized as serious barriers to achieving effective half-micrometer and smaller wafer lithography processes. A promising remedy for proximity effects is to adjust mask feature shapes to compensate for predictable distortions in the wafer lithography process. We present a general method for computing proximity-corrected shapes. A technique we call `zone sampling' provides accurate models of proximity behaviors with optimum computational efficiency. Proximity behavior for arbitrary layout configurations is derived from 2-D density measurements (zone samples) computed from IC layout pattern data. Zone sampling provides a complete `behavior model' of combined, non-linear proximity effects, including optical, process, and underlying substrate mechanisms.

Citation Download Citation

John P. Stirniman and Michael L. Rieger "Fast proximity correction with zone sampling", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175423

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