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13 July 1994 Direct growth of single-domain and twin-free CdTe(111)B on vicinal Si(001) by molecular beam epitaxy
Yuanping Chen, Jean-Pierre Faurie, Sivalingam Sivananthan
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Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179683
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States
Abstract
CdTe(111)B layers have been grown on Si(001) and its vicinal surface. Formation of double domains and twins is found to be related to the surface structure of the Si(001) substrate. The tilt angle and tilt direction of the misoriented Si(001) substrate play an important role in suppressing the formation of double domains and twins. A double-domain and twinned CdTe(111)B layer is always obtained, when it is grown on nominal Si(001) substrate. However, by optimizing the tilt parameters, one can consistently obtain single-domain and twin-free CdTe(111)B layers grown on slightly misoriented Si(001) substrates.
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Yuanping Chen, Jean-Pierre Faurie, and Sivalingam Sivananthan "Direct growth of single-domain and twin-free CdTe(111)B on vicinal Si(001) by molecular beam epitaxy", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179683
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Cited by 6 scholarly publications.
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KEYWORDS
Molecular beam epitaxy
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