Paper
24 January 2011 DFB lasers for sensing applications in the 3.0-3.5 um wavelength range
Marc O. Fischer, Michael von Edlinger, Lars Nähle, Johannes Koeth, Adam Bauer, M. Dallner, Sven Höfling, Lukas Worschech, Alfred W. B. Forchel, Sofiane Belahsene, Yves Rouillard
Author Affiliations +
Abstract
There are two particularly promising approaches to reach laser emission in the 3.0 - 3.5 μm wavelength range with application grade performance; GaSb based laser structures using GaInAsSb / AlGaInAsSb type-I quantum well (QW) active region, as well as type-II interband cascade (IC) material have been investigated and corresponding results are discussed in this paper. We also present different techniques for the fabrication of spectrally monomode distributed feedback (DFB) lasers for sensing applications in the targeted wavelength range. Based on the different waveguide designs of the two material approaches, different concepts to achieve monomode emission were applied: lateral metal gratings were used for type-I laser structures, vertical sidewall gratings for ICL designs. The fabrication procedure, including growth of the laser structures by molecular beam epitaxy, device processing and characterization, are described in the following. DFB emission under continuous wave (cw) operation was achieved up to room temperature (RT) in the target wavelength range. Sidemode suppression ratios (SMSRs) exceed 30dB for the fabricated devices and mode-hop free monomode tuning ranges of several nanometers are demonstrated.
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Marc O. Fischer, Michael von Edlinger, Lars Nähle, Johannes Koeth, Adam Bauer, M. Dallner, Sven Höfling, Lukas Worschech, Alfred W. B. Forchel, Sofiane Belahsene, and Yves Rouillard "DFB lasers for sensing applications in the 3.0-3.5 um wavelength range", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79450E (24 January 2011); https://doi.org/10.1117/12.871411
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Cited by 3 scholarly publications.
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KEYWORDS
Quantum cascade lasers

Continuous wave operation

Laser applications

Quantum wells

Semiconductor lasers

Gallium antimonide

Etching

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