Paper
24 April 1995 Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers
James R. Hoff, Erwan Bigan, Gail J. Brown, Manijeh Razeghi
Author Affiliations +
Abstract
Acceptor doped Quantum Well Intersubband Photodetectors with GaAs wells and lattice matched barriers of both ternary (In0.49Ga0.51P) and quaternary (In0.62Ga0.38As0.22P0.78) materials have been grown on semi-insulating GaAs substrates by Low Pressure Metal Organic Chemical Vapor Deposition. Mesa devices were fabricated and subjected to a series of tests to illuminate experimentally some of the detection capabilities of the lattice matched quaternary InxGa1-xAsyP1-y system with (0 <EQ x <EQ 0.52) and (0 <EQ y <EQ 1). The observed photoresponse cut-off wavelengths are in good agreement with the activation energies observed in the temperature dependence of the dark currents. Kronig-Penney calculations were used to model the intersubband transition energies.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Hoff, Erwan Bigan, Gail J. Brown, and Manijeh Razeghi "Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206893
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KEYWORDS
Gallium arsenide

Quantum wells

Photodetectors

Absorption

FT-IR spectroscopy

Quantum well infrared photodetectors

Gallium

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