High-power flared semiconductor laser amplifiers

Mario Dagenais; Si Hyung Cho; Ping-Hui S. Yeh; Stephen H. Fox; R. Prakasam; Peter J.S. Heim; Scott A. Merritt; C.-C. Lu; Vijayanand Vusirikala; Badri Prasad Gopalan; Suryaprasad Kareenahalli; Colin E. C. Wood

doi:10.1117/12.206910

24 April 1995 High-power flared semiconductor laser amplifiers

Mario Dagenais, Si Hyung Cho, Ping-Hui S. Yeh, Stephen H. Fox, R. Prakasam, Peter J.S. Heim, Scott A. Merritt, C.-C. Lu, Vijayanand Vusirikala, Badri Prasad Gopalan, Suryaprasad Kareenahalli, Colin E. C. Wood

Author Affiliations +

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206910
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

A normal incidence tapered laser amplifier is shown to produce more than 4.5 W optical power at 810 nm in a diffraction-limited beam. A new angled-facet tapered laser amplifier has demonstrated as much as 5 W optical power in a diffraction-limited beam at 810 nm with only a few mWs of coupled input power. Angled-facet laser amplifiers exhibit near-ideal Gaussian beam characteristics. More than 1.9 W CW is obtained in a 970 nm angled-facet tapered laser amplifier. A near-ideal beam quality factor M² is obtained.

Citation Download Citation

Mario Dagenais, Si Hyung Cho, Ping-Hui S. Yeh, Stephen H. Fox, R. Prakasam, Peter J.S. Heim, Scott A. Merritt, C.-C. Lu, Vijayanand Vusirikala, Badri Prasad Gopalan, Suryaprasad Kareenahalli, and Colin E. C. Wood "High-power flared semiconductor laser amplifiers", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206910

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