Paper
24 April 1995 New capabilities of GaAs detectors for UV applications
Monique T. Constant, Dorothee T. Loridant, J. C. Camart, S. Meziere, Luc Boussekey, M. Chive
Author Affiliations +
Abstract
The purpose of this paper is to introduce UV sensors based on GaAs material and specially suited for low light power detection in spectroscopic systems and energy measurements of UV radiation in industrial and biomedical applications. Of particular interest here are n-type GaAs planar photoconductors optimized for UV detection and UV dosimeters made of plasma hydrogenated n+-type GaAs. After a description of the devices and their technology, an analysis of their electrical and optical properties is given. The results obtained are reviewed in terms of static responsivity and efficiency as a function of wavelength.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Monique T. Constant, Dorothee T. Loridant, J. C. Camart, S. Meziere, Luc Boussekey, and M. Chive "New capabilities of GaAs detectors for UV applications", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206928
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Gallium arsenide

Ultraviolet radiation

Plasma

Hydrogen

Resistance

Visible radiation

Electrodes

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