Paper
3 July 1995 Development and evaluation of chromium-based attenuated phase-shift masks for DUV exposure
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Abstract
We had developed an attenuated phase shift mask for DUV exposure (DUV- AttPSM) using a CrFx film as a phase shifting layer. But the durability against DUV irradiation was poor (ca. 0.8% transmittance increase after 37 kJ/cm2). In addition, an exposure test proved that the phase shift angle of the DUV-AttPSM was 170 degrees. We improved the durability against DUV irradiation of our DUV-AttPSM by changing the deposition conditions. The transmittance change after 37 kJ/cm2 irradiation is reduced to 0.15%. The improved film shows acceptable durability against chemicals, and there is no problem in the mask- cleaning process. Furthermore, we evaluated the exposure properties of a DUV-AttPSM with a phase-shift angle of ca. 180 degrees, and the focus latitude for a 0.25 micrometers hole array turns out to be 2.5 micrometers , being 5- times as large as that of a binary mask. In addition, the consecutive deposition stability of the blank was tested, and the DUV-AttPSM proved to be adaptable to mass production.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koichi Mikami, Hiroshi Mohri, Hiroyuki Miyashita, Naoya Hayashi, and Hisatake Sano "Development and evaluation of chromium-based attenuated phase-shift masks for DUV exposure", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212782
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Cited by 2 scholarly publications.
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KEYWORDS
Phase shifts

Transmittance

Deep ultraviolet

Photomasks

Chromium

Binary data

Sputter deposition

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