Integrity of N2O oxides in WSi2 polycide process

Chung Jen Chien; Jeong Yeol Choi; Guo-Qiang Lo; Chuen-Der Lien

doi:10.1117/12.221128

15 September 1995 Integrity of N₂O oxides in WSi₂ polycide process

Chung Jen Chien, Jeong Yeol Choi, Guo-Qiang Lo, Chuen-Der Lien

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221128
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

This paper reports on the integrity of thin N₂O oxides in tungsten polycide (poly-Si/WSi₂ stack) gated MOS structures, which was characterized by their charge-to-breakdown (Q_BD). In this study, WSi₂ films were formed either by chemical vapor deposition (CVD) or sputtering. It is found that with CVD-WSi₂ gate, N₂O gate oxide has a much degraded integrity in terms of high infant-mortality rate and low Q_BD values compared with the sputtered WSi₂ gate.

Citation Download Citation

Chung Jen Chien, Jeong Yeol Choi, Guo-Qiang Lo, and Chuen-Der Lien "Integrity of N₂O oxides in WSi₂ polycide process", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221128

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