The structure of Pd-silicided field emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening, coating metal and furnace annealing in N2 ambient. The sheet resistance and Auger electron spectroscope results depict the transformation of silicidation. Transmission electron microscope of bright-field, dark-field, and diffraction pattern show the formation of silicided emitters. These emitters have potential applications in vacuum microelectronics to obtain superior lifetime, relaibility, and stability.
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