Porous silicon layers for optical recording

E. N. Sal'kova; Constantin Nelep; E. B. Kaganovich; A. V. Savchuk; T. A. Sergan

doi:10.1117/12.226234

3 November 1995 Porous silicon layers for optical recording

E. N. Sal'kova, Constantin Nelep, E. B. Kaganovich, A. V. Savchuk, T. A. Sergan

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226234
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

Using the conventional porous silicon (PS) technology we realize an Si-based irreversible optical recording medium. The recording was performed on PS layers by the second harmonic ((lambda) equals 0.53 micrometer) of YAG-laser operating in the multipulse mode. The results have shown the ablational mechanism of the optical recording.

Citation Download Citation

E. N. Sal'kova, Constantin Nelep, E. B. Kaganovich, A. V. Savchuk, and T. A. Sergan "Porous silicon layers for optical recording", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226234

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