Properties Of Passivant Films On HgCdTeÃ¢â‚¬â€?Interaction With The Substrate

G. D. Davis; T. S. Sun; S. P. Buchner; N. E. Byer

doi:10.1117/12.931980

29 December 1981 Properties Of Passivant Films On HgCdTe - Interaction With The Substrate

G. D. Davis, T. S. Sun, S. P. Buchner, N. E. Byer

Proceedings Volume 0282, Technical Issues in Focal Plane Development; (1981) https://doi.org/10.1117/12.931980
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

Two commonly used passivants of Hg₀.₈Cd₀.₂Te, the anodic oxide and ZnS, have been studied by x-ray photoelectron spectroscopy combined with ion sputtering. Chemical depth profiles of anodic oxide films of 360 to 1600 A showed that the oxide composition is constant with depth and independent of oxide thickness. Chemical shifts and line shape analysis of the Cd M₄₅N₄₅N₄₅ Auger transition in the oxide, CdO, Cd(OH)2, and CdTeO₃ demonstrate that CdTeO₃ is the major constituent of the anodic oxide. The oxide composi-tion is interpreted as 44% CdTeO₃, 29% CdTe₂O₅, 17% HgTeO₃, and 10% HgTe2O5. Anodization of HgCdTe depletes the semiconductor of 30% - 40% of its Hg near the interface. The spatial extent of this Hg depletion is a function of oxide thickness for thin oxides (<1000 A) but is a constant (150-200 A) for thick films. No significant change in the Cd concentration is seen. A ZnS film deposited on a chemically etched sample forms a graded interface of a (ZnHgCd)Te alloy. In this case, no Hg depletion is seen. Deposi-tion of ZnS on an anodized substrate in high vacuum leads to a reaction of the Zn with the residual 0₂ in the chamber to form ZnO on the anodic oxide before the ZnS. The ZnO then diffuses throughout the anodic oxide.

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G. D. Davis, T. S. Sun, S. P. Buchner, and N. E. Byer "Properties Of Passivant Films On HgCdTe - Interaction With The Substrate", Proc. SPIE 0282, Technical Issues in Focal Plane Development, (29 December 1981); https://doi.org/10.1117/12.931980

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