Low-temperature photoluminescence characterization of impurity-doped GaAs and silicides prepared by molecular beam epitaxy, high-energy ion implantation, and combined ion-beam and molecular beam epi

Yunosuke Makita

doi:10.1117/12.250922

13 September 1996 Low-temperature photoluminescence characterization of impurity-doped GaAs and silicides prepared by molecular beam epitaxy, high-energy ion implantation, and combined ion-beam and molecular beam epi

Yunosuke Makita

Author Affiliations +

Proceedings Volume 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III; (1996) https://doi.org/10.1117/12.250922
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

By using molecular beam epitaxy (MBE) technology, one can now fabricate routinely ultra-pure GaAs and Si layers with the background residual impurity concentration lower than approximately 1 by 10¹⁴ cm^-3. We incorporated mass-separated impurities into these layers by means of high-energy ion-implantation (HE-I²) and low-energy ion beam impinging during MBE growth (CIBMBE). Low-temperature (2K) photoluminescence (PL) spectra from acceptor-doped GaAs layers prepared by HE-I² and CIBMBE methods revealed that multiple shallow emission levels are formed with increasing net hole concentration, N_A-N_D. These emissions were theoretically interpreted as the pairs between ground- and excited-states acceptors. The absence of these energy levels in the conventional specimens was attributed to a strong optical compensation effect induced by an extremely small amount of shallow donors that were accidentally introduced during sample preparation. The majority of these energy levels were found to present strong red or blue energy-shifting with increasing N_A-N_D. These PL features were confirmed to be used for the determination of N_A-N_D and compensation ratio totally by an optical method. High-dose incorporation of Fe atoms into Si substrates was carried out by HE-I² method for the synthesis of beta-FeSi₂. In 2K-PL spectra, one noticed strong edge-emission from beta- FeSi₂, indicating that HE-I² method is powerful to synthesize high quality silicides.

Citation Download Citation

Yunosuke Makita "Low-temperature photoluminescence characterization of impurity-doped GaAs and silicides prepared by molecular beam epitaxy, high-energy ion implantation, and combined ion-beam and molecular beam epi", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250922

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Gallium arsenide

Chemical species

Doping

Magnesium

Ion beams

Beryllium

Calcium

Show All Keywords

Keywords/Phrases

Search In:

Publication Years