Investigation of ZnO-based ultraviolet light-emitting diodes

Ching-Ting Lee; Hao-Yu Chang

doi:10.1117/12.2044343

8 March 2014 Investigation of ZnO-based ultraviolet light-emitting diodes

Ching-Ting Lee, Hao-Yu Chang

Proceedings Volume 8987, Oxide-based Materials and Devices V; 89871W (2014) https://doi.org/10.1117/12.2044343
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Recently, ZnO-based semiconductors have been deposited on various substrates using various methods. Furthermore, they were used in ultraviolet light-emitting diodes (UVLEDs) due to inherent properties including wide direct bandgap and high binding energy. In this work, two different deposition systems were utilized to deposit the ZnO-based films. The resulted films were applied to fabricate the ZnO-based UVLEDs. Firstly, the high quality i-ZnO films were deposited as the active layer by using the vapor cooling condensation system to enhance the internal quantum efficiency. Secondly, the double-heterostructured MgZnO/ZnO/MgZnO layers were deposited as the active layer at low temperature using the vapor cooling condensation system to enhance light intensity. Furthermore, various component ratios of i- MgZnO and i-MgBeZnO films were deposited using a radio frequency (RF) magnetron co-sputter system. Consequently, the deposited films with various energy bandgaps were stacked alternately to form the active layer of multiple-quantum well (MQW) UVLEDs. The light emitting intensity of MQW UVLEDs was better than that of the traditional p-i-n UVLEDs. This phenomenon was attributed to the carrier confinement in well layers and improvement probability of radiative recombination.

Citation Download Citation

Ching-Ting Lee and Hao-Yu Chang "Investigation of ZnO-based ultraviolet light-emitting diodes", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871W (8 March 2014); https://doi.org/10.1117/12.2044343

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