Photoresist development modeling based on continuity equations

Yueqi Zhu; Luigi Capodieci; Franco Cerrina

doi:10.1117/12.275819

7 July 1997 Photoresist development modeling based on continuity equations

Yueqi Zhu, Luigi Capodieci, Franco Cerrina

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275819
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

In this paper, we propose a model to simulate photoresist development based on continuity equations. In the resist dissolution process, to consider different components (developer, resist, reaction by-product, etc.), each component's local concentration is described by the continuity equation. The resist development process is viewed as the diffusion-reaction process of all components involved in the dissolution process. A simulation program has been written based on the above concept. The simulation for different previous existing models are discussed.

Citation Download Citation

Yueqi Zhu, Luigi Capodieci, and Franco Cerrina "Photoresist development modeling based on continuity equations", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275819

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