Improved notch model for resist dissolution in lithography simulation

Stewart A. Robertson; Edward K. Pavelchek; Wolfgang Hoppe; Robert Wildfeuer

doi:10.1117/12.436815

24 August 2001 Improved notch model for resist dissolution in lithography simulation

Stewart A. Robertson, Edward K. Pavelchek, Wolfgang Hoppe, Robert Wildfeuer

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436815
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The use of experimental development rate information is used to demonstrate various deficiencies in the dissolution rate equations commonly employed in commercial lithography simulation programs. An improved version of the Notch dissolution rate equation, incorporating one new parameter, is proposed, which addresses the observed deficiencies. Simulation work comparing the new equation to the standard Notch model reveals significant differences in process window and exposure margin, yet negligible changes in feature profile and iso-dense bias at best focus and exposure.

Citation Download Citation

Stewart A. Robertson, Edward K. Pavelchek, Wolfgang Hoppe, and Robert Wildfeuer "Improved notch model for resist dissolution in lithography simulation", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436815

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