Parametric study of C-N films deposited by reactive laser ablation

Armando Luches; A. P. Caricato; Emilia D'Anna; Gilberto Leggieri; Maurizio Martino; Alessio Perrone; G. Barucca; Guiseppe Majni; Paolo Mengucci; Rodica Alexandrescu; Ion N. Mihailescu; Joseph Zemek

doi:10.1117/12.271673

4 April 1997 Parametric study of C-N films deposited by reactive laser ablation

Armando Luches, A. P. Caricato, Emilia D'Anna, Gilberto Leggieri, Maurizio Martino, Alessio Perrone, G. Barucca, Guiseppe Majni, Paolo Mengucci, Rodica Alexandrescu, Ion N. Mihailescu, Joseph Zemek

Author Affiliations +

Proceedings Volume 3093, Nonresonant Laser-Matter Interaction (NLMI-9); (1997) https://doi.org/10.1117/12.271673
Event: Nonresonant Laser-Matter Interaction, 1996, St. Petersburg, Russian Federation

Abstract

Thin amorphous C-N films were deposited on <100> Si and KBr substrates at room temperature by XeCl laser ablation of graphite in low pressure (0.01 - 2.5 mbar) nitrogen atmosphere. Laser fluences were 3, 6, and 12 J/cm². Scanning electron microscopy, energy dispersion spectroscopy, x-ray diffraction spectroscopy, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy were used to characterize the deposited films, which result homogeneous, hard, amorphous and present a high electrical resistivity. The deposition rate decreases with increasing ambient pressure. The N/C atomic ratio into the deposited films generally increases with increasing ambient pressure and laser fluence. N/C values up to 0.5 were measured. Heating of the substrates during film deposition causes a reduction of the N/C ratio.

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Armando Luches, A. P. Caricato, Emilia D'Anna, Gilberto Leggieri, Maurizio Martino, Alessio Perrone, G. Barucca, Guiseppe Majni, Paolo Mengucci, Rodica Alexandrescu, Ion N. Mihailescu, and Joseph Zemek "Parametric study of C-N films deposited by reactive laser ablation", Proc. SPIE 3093, Nonresonant Laser-Matter Interaction (NLMI-9), (4 April 1997); https://doi.org/10.1117/12.271673

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