Implementation of organic bottom antireflective coating in 0.35-um polycide fabrication

Tze-Man Ko; Ming Hui Fan; Alex Cheng; Raymond Yu

doi:10.1117/12.280541

14 August 1997 Implementation of organic bottom antireflective coating in 0.35-um polycide fabrication

Tze-Man Ko, Ming Hui Fan, Alex Cheng, Raymond Yu

Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280541
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

In the development of i-line 0.35 micrometers technology, the reflection from the poly-Si substrates become so severe that notching was observed in al the areas with larger than 2000 angstrom topological difference during the lithographical masking. As a result, microtrenches and poor electrical characteristics were obtained after etching. By applying 1520 angstrom of organic bottom anti-reflective coating, the reflection from the substrates was greatly reduced from 50 percent to less than 5 percent. Consequently, the design rules developed for i-line 0.35 micrometers technology could be preserved without microtrench formation. The organic BARC also provided additional advantages of planarizing the different topological features on the substrates. And, its etching rate was about the same as the photoresists. The exposure energy and usable depth of focus latitudes were slightly improved with the application of organic BARC. There were basically no differences in masking linearity and iso-dense bias when comparing the critical dimensions of the photoresists with or without applying the organic BARC. The experimental data agreed with the computer simulation data very well. Furthermore, good and were acceptable to the manufacturing environment. Defect density induced by the additional step of coating the organic BARC was very low. Therefore, the implementation of organic BARC was relatively simple and was essential to reduce the notching produced by substrate reflection in the critical layers of the 0.35 micrometers devices.

Citation Download Citation

Tze-Man Ko, Ming Hui Fan, Alex Cheng, and Raymond Yu "Implementation of organic bottom antireflective coating in 0.35-um polycide fabrication", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280541

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
11 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Bottom antireflective coatings

Reflection

Etching

Photoresist materials

Coating

Computer simulations

Manufacturing

Keywords/Phrases

Search In:

Publication Years