Paper
14 August 1997 Self-consistent analytical models of semiconductor vertical-cavity surface-emitting lasers
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Abstract
In the present paper, vertical-cavity surface-emitting lasers (VCSELs) are briefly compared with edge-emitting lasers, general principles of their simulation are formulated, an importance of self-consistent approach in modeling of semiconductor lasers is proved and main results of VCSEL simulations are given for etched-well VCSELs and for proton- implanted top-surface-emitting lasers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wlodzimierz Nakwaski "Self-consistent analytical models of semiconductor vertical-cavity surface-emitting lasers", Proc. SPIE 3186, Laser Technology V: Physics and Research and Development Trends, (14 August 1997); https://doi.org/10.1117/12.280513
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KEYWORDS
Vertical cavity surface emitting lasers

Semiconductor lasers

Semiconductors

Optical simulations

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