Paper
21 October 1998 Nonlinear dependence of gain on the energy density in semiconductor lasers
M. G. Noppe
Author Affiliations +
Proceedings Volume 3485, 11th International Vavilov Conference on Nonlinear Optics; (1998) https://doi.org/10.1117/12.328270
Event: Eleventh International Vavilov Conference on Nonlinear Optics, 1997, Novosibirsk, Russian Federation
Abstract
The effect, determining non-linearity of gain in semiconductor lasers, is described. This nonlinear effect works, when saturation effect doesn't work. The effect was taken into consideration for calculation of light output power and threshold current.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Noppe "Nonlinear dependence of gain on the energy density in semiconductor lasers", Proc. SPIE 3485, 11th International Vavilov Conference on Nonlinear Optics, (21 October 1998); https://doi.org/10.1117/12.328270
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Cited by 4 scholarly publications.
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KEYWORDS
Semiconductor lasers

Laser damage threshold

Laser resonators

Carbon monoxide

Integrated optics

Mirrors

Physics

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