Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail

Vasileios S. Sinnis; Myron Seto; Gert W. t'Hooft; Y. Watabe; Alan P. Morrison; Willem Hoekstra; W. B. De Boer

doi:10.1117/12.342802

19 March 1999 Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail

Vasileios S. Sinnis, Myron Seto, Gert W. t'Hooft, Y. Watabe, Alan P. Morrison, Willem Hoekstra, W. B. De Boer

Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342802
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We report on a novel silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry-Perot oscillations. Resonant peaks and anti-resonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 nm and 709 nm. The leakage current density is 85 pA/mm² at -5 V, and the average zero-bias capacitance is 12 pF/mm². We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response.

Citation Download Citation

Vasileios S. Sinnis, Myron Seto, Gert W. t'Hooft, Y. Watabe, Alan P. Morrison, Willem Hoekstra, and W. B. De Boer "Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342802

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