Paper
25 June 1999 Development of a technique for rapid at-wavelength inspection of EUV mask blanks
Steven J. Spector, Ping Luo, Anthony E. Novembre, Leonidas E. Ocola, Donald L. White, Donald M. Tennant, Obert R. Wood II
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Abstract
We have dramatically increased the sensitivity of a technique for the rapid inspection of EUV multilayer-coated mask blanks. In this technique an EUV sensitive resist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. Reflectivity defects in the mask blank results in mounds in a partially developed positive resists that appear as high contrast objects in a standard Nomarski microscope. The use of a higher contrast resist is shown experimentally to result in the creation of dramatically taller mounds. A simple model for the exposure and development of the resists has been developed and the predictions of the model compare well with the experimental results.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven J. Spector, Ping Luo, Anthony E. Novembre, Leonidas E. Ocola, Donald L. White, Donald M. Tennant, and Obert R. Wood II "Development of a technique for rapid at-wavelength inspection of EUV mask blanks", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351134
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Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

Reflectivity

Extreme ultraviolet

Extreme ultraviolet lithography

Inspection

Contamination

Photoresist materials

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