GaAs- and InP-based HBT technology for 100-GHz applications

David A. Ahmari; Quesnell J. Hartmann; Milton Feng; Gregory E. Stillman

doi:10.1117/12.370203

12 November 1999 GaAs- and InP-based HBT technology for 100-GHz applications

David A. Ahmari, Quesnell J. Hartmann, Milton Feng, Gregory E. Stillman

Proceedings Volume 3795, Terahertz and Gigahertz Photonics; (1999) https://doi.org/10.1117/12.370203
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Resulting from excellent direct-current, high-frequency, and reliability characteristics, HBT technology has attracted much attention in recent years. To help technology development groups determine if HBTs are the correct solution for 100 GHz applications, this work briefly describes the progress of HBT technology during the last decade and sets forth some of the reasons for employing this technology. Different HBT technologies are discussed and the current state-of-the-art is presented. Finally the existing limitations and future of HBT technology are discussed.

Citation Download Citation

David A. Ahmari, Quesnell J. Hartmann, Milton Feng, and Gregory E. Stillman "GaAs- and InP-based HBT technology for 100-GHz applications", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); https://doi.org/10.1117/12.370203

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