Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range

Hooman Mohseni; Joseph S. Wojkowski; Abbes Tahraoui; Manijeh Razeghi; Gail J. Brown; W. C. Mitchel

doi:10.1117/12.382114

13 April 2000 Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range

Hooman Mohseni, Joseph S. Wojkowski, Abbes Tahraoui, Manijeh Razeghi, Gail J. Brown, W. C. Mitchel

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382114
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Growth and characterization of type-II detectors for mid-IR wavelength range is presented. The device has a p-i-n structure is designed to operate in the non-equilibrium mode with low tunneling current. The active layer is a short period InAs/GaSb superlattice. Wider bandgap p-type AlSb and n-type InAs layers are used to facilitate the extraction of both electronics and holes from the active layer for the first time. The performance of these devices were compared to the performance of devices grown at the same condition, but without the AlSb barrier layers. The processed devices with the AlSb barrier show a peak responsivity of about 1.2A/W with Johnson noise limited detectivity of 1.1 X 10¹¹ cm X Hz^1/2/W at 8 micrometers at 80 K at zero bias. The details of the modeling, growth, and characterizations will be presented.

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Hooman Mohseni, Joseph S. Wojkowski, Abbes Tahraoui, Manijeh Razeghi, Gail J. Brown, and W. C. Mitchel "Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382114

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