Design of the deeply etched binary optics even device for the exposure system of the quasimolecule laser

Ping Xu; Yiling Sun; Jingzhen Li

doi:10.1117/12.403986

11 October 2000 Design of the deeply etched binary optics even device for the exposure system of the quasimolecule laser

Ping Xu, Yiling Sun, Jingzhen Li

Author Affiliations +

Proceedings Volume 4224, Biomedical Photonics and Optoelectronic Imaging; (2000) https://doi.org/10.1117/12.403986
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

In this paper, the new binary optical even device is presented. Whose phase depth exceeded 2(pi) . This device has the characteristics of less weight, convenient adjusting, high utilization rate of energy and well- distributed light beam, which can be used in quasi-molecule laser exposure system.

Citation Download Citation

Ping Xu, Yiling Sun, and Jingzhen Li "Design of the deeply etched binary optics even device for the exposure system of the quasimolecule laser", Proc. SPIE 4224, Biomedical Photonics and Optoelectronic Imaging, (11 October 2000); https://doi.org/10.1117/12.403986

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