Automatic calibration of lithography simulation parameters

Sven Jug; Richard Huang; Jeff D. Byers; Chris A. Mack

doi:10.1117/12.425230

26 April 2001 Automatic calibration of lithography simulation parameters

Sven Jug, Richard Huang, Jeff D. Byers, Chris A. Mack

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425230
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

A method is presented for automatically adjusting the input parameters of a lithography simulator to more accurately match a given set of experimental conditions. Using contrast curves, swing curves or focus-exposure matrices, simulation parameters are automatically modified in a search to minimize the difference between the simulated results and the experimental data. The algorithms used are described, as well as their robustness and sensitivity to experimental noise. Results of these tuning procedures are presented and the tuned set of parameters is shown to give good quantitative agreement of simulation to experiment.

Citation Download Citation

Sven Jug, Richard Huang, Jeff D. Byers, and Chris A. Mack "Automatic calibration of lithography simulation parameters", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425230

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