Design optimization and fabrication process of MEMS micro-magnetometer based on tunneling effect

Zhaoying Zhou; Xing Yang; Junhua Zhu; Xiongying Ye

doi:10.1117/12.483166

10 September 2002 Design optimization and fabrication process of MEMS micro-magnetometer based on tunneling effect

Zhaoying Zhou, Xing Yang, Junhua Zhu, Xiongying Ye

Proceedings Volume 4928, MEMS/MOEMS Technologies and Applications; (2002) https://doi.org/10.1117/12.483166
Event: Photonics Asia, 2002, Shanghai, China

Abstract

The tunneling effect is a kind of quantum effect used extensively. The sensor based on tunneling effect has some advantages, such as high sensitivity, rapid response, low power consumption, low driving voltage and so on. In particular, combined with the MEMS technology, tunneling effect has shown a good application foreground in micro sensor fields. According to the quantum mechanics, such as Schordinger's equation, the theory models of tunneling effect are presented in this paper. Also the expressions of the transmission coefficient and tunneling current about the tunneling barriers are obtained. On the basis of these, a kind of MEMS micro magnetometer based on tunneling effect is presented. The mechanics model of the membrane, which is the key component and is subjected to the axial residual stress at both ends, is founded. The membrane's parameters are optimized and simulated. Some key fabrication processes of the micro magnetometer, such as silicon wafer, glass, combined plate process are developed. Further more, the prototype ofthe MEMS micro magnetometer based on tunneling effect is fabricated.

Citation Download Citation

Zhaoying Zhou, Xing Yang, Junhua Zhu, and Xiongying Ye "Design optimization and fabrication process of MEMS micro-magnetometer based on tunneling effect", Proc. SPIE 4928, MEMS/MOEMS Technologies and Applications, (10 September 2002); https://doi.org/10.1117/12.483166

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KEYWORDS

Silicon

Electrodes

Magnetometers

Semiconducting wafers

Microelectromechanical systems

Glasses

Sensors

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