Contact shrinkage techniques for 157-nm lithography

Mitsuharu Yamana; Masumi Hirano; Seiji Nagahara; Makoto Tominaga

doi:10.1117/12.534596

14 May 2004 Contact shrinkage techniques for 157-nm lithography

Mitsuharu Yamana, Masumi Hirano, Seiji Nagahara, Makoto Tominaga

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534596
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The development of a process for contact hole tends to be overdue although priority is generally given to the development of line and space patterns. The size of a contact hole pattern in 45 nm node will be about 60 nm. 157-nm lithography will be applied to 45 nm node. The depth of focus is critical issue. Then we evaluated three types of contact hole shrinkage techniques such as Thermal Flow, SAFIER and RELACS for 157-nm lithography. A resist which was consisted of a polymer with fluoride on a side chain was used. The shrinkage temperature was optimized by applying hole shrinkage processes to patterns formed by 193-nm lithography. It was made clear that Thermal Flow process was not practical in the view point of extremely high shrinkage temperature. On the other hand, hole size was reduced by about 20 nm in the case of SAFIER and RELACS at controllable temperature. It is an advantage of SAFIER process that hole size is changed with shrinkage bake temperature. In RELACS process, small mixing temperature dependence of critical dimension (CD) is advantageous. Also in 157-nm lithography, it was shown that the shrinkage techniques such as SAFIER and RELACS are possible, and the about 75nm hole pattern was formed.

Citation Download Citation

Mitsuharu Yamana, Masumi Hirano, Seiji Nagahara, and Makoto Tominaga "Contact shrinkage techniques for 157-nm lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534596

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