The lithographic impact of resist model parameters

Mark D. Smith; Jeffrey D. Byers; Chris A. Mack

doi:10.1117/12.537581

14 May 2004 The lithographic impact of resist model parameters

Mark D. Smith, Jeffrey D. Byers, Chris A. Mack

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.537581
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The resist models in PROLITH are designed to be a mechanistic description of the resist chemistry and physics of optical lithography. This is especially true for the expose and post-exposure bake processes, where the resist chemistry can be mapped almost directly to the input parameters in the PROLITH models. In this study, we review the models in PROLITH and show how different chemistry parameters, such as the quantum yield and the reaction kinetics during PEB, can be translated into resist model parameters. With this “chemist to simulator” translator, we show how the models can be used to better understand how resist formulation impacts resist response. Specifically, we will show how quencher loading, and acid and quencher diffusivities impact depth of focus for isolated and dense features.

Citation Download Citation

Mark D. Smith, Jeffrey D. Byers, and Chris A. Mack "The lithographic impact of resist model parameters", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.537581

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