The judgment criteria of halftone pinhole defects

Kyong Mun Shin; Dae-Woo Kim; Jung-Kwan Lee; Dong-Hyuk Lee; Jin-Min Kim; Sang-Soo Choi

doi:10.1117/12.557728

20 August 2004 The judgment criteria of halftone pinhole defects

Kyong Mun Shin, Dae-Woo Kim, Jung-Kwan Lee, Dong-Hyuk Lee, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557728
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

As the design rule of the semiconductor devices approaches to 90nm node technology, the defect controllability of the photomask becomes critical success factor. The halftone defects generated in photomask cannot be easily judged because the results of Aerial Image Measurement System (AIMS) are flexible with the defect size and transmission. Also, the printability of halftone defect on wafer is not clear because of low sensitivity of inspection system for pinholes. In this paper, halftone defects with programmed size were fabricated by Focused Ion Beam (FIB) repair tool. We evaluated the transmission correlation of the halftone defects between printability with 248nm simulation tool and inspection machine with 365nm light source. We could make the judgment criteria of halftone defects captured by inspection machine without AIMS result from this correlation result. Inspection machines such as KLA-Tencor and Lasertec are used to verify the detectability of halftone defects. Wafer printability was simulated using AIMS fab 248. Even though the transmission of halftone defects is same, the energy intensity of large size defects is higher than that of small size.

Citation Download Citation

Kyong Mun Shin, Dae-Woo Kim, Jung-Kwan Lee, Dong-Hyuk Lee, Jin-Min Kim, and Sang-Soo Choi "The judgment criteria of halftone pinhole defects", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557728

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