Paper
25 March 2005 Back-illuminated solar-blind photodetectors for imaging applications
Ryan McClintock, Alireza Yasan, Kathryn Mayes, Patrick Kung, Manijeh Razeghi
Author Affiliations +
Abstract
Back-illuminated solar-blind ultraviolet p-i-n photodetectors and focal plane arrays are investigated. We initially study single-pixel devices and then discuss the hybridization to a read-out integrated circuit to form focal plane arrays for solar-blind UV imaging. The photodetectors consist of an AlGaN p-i-n active region grown atop a high quality AlN template layer with a ~1 μm thick Al0.5Ga0.5N:Si-In co-doped low-resistance UV-transparent lateral conduction layer. The material is processed into a 320 x 256 array of 25 μm x 25 μm pixels using standard lithographic techniques. Typical pixels demonstrate a peak responsivity of 93 mA/W at 278 nm; this corresponds to an external quantum efficiency of 42%. The uniformity of the array is discussed, and a selection of sample images from the solar-blind focal plane array is included. In addition, recent attempts to achieve shorter wavelength deep UV back-illuminated p-i-n photodetector and focal plane arrays are also discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan McClintock, Alireza Yasan, Kathryn Mayes, Patrick Kung, and Manijeh Razeghi "Back-illuminated solar-blind photodetectors for imaging applications", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.597077
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Cited by 6 scholarly publications.
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KEYWORDS
Staring arrays

Photodetectors

Aluminum

Back illuminated sensors

Readout integrated circuits

Ultraviolet radiation

Gallium

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