ZnO doping by ion implantation

M. A. Hernandez-Fenollosa; E. Rita; L. C. Damonte

doi:10.1117/12.615000

31 August 2005 ZnO doping by ion implantation

M. A. Hernandez-Fenollosa, E. Rita, L. C. Damonte

Proceedings Volume 5922, Hard X-Ray and Gamma-Ray Detector Physics VII; 59220X (2005) https://doi.org/10.1117/12.615000
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

Preliminary studies on ZnO single crystals implanted with In (donor), As (acceptor) and ¹¹¹Ag (acceptor) are presented. Each dopants electronic structure was investigated by means of positron annihilation lifetime (PALS) and photoluminescence (PL) measurements. For some of the crystals, the lifetime spectra revealed the presence of effective positron traps. Moreover, for all samples the luminescence spectra consist of a near-band-edge (NBE) and a deep-level (DL) emission. The observed trends will be discussed in terms of the origin, nature and charge state of the induced defects involved.

Citation Download Citation

M. A. Hernandez-Fenollosa, E. Rita, and L. C. Damonte "ZnO doping by ion implantation", Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220X (31 August 2005); https://doi.org/10.1117/12.615000

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