Enabling DFM and APC strategies with advanced process metrics

Kevin Monahan; Umar Whitney

doi:10.1117/12.655894

24 March 2006 Enabling DFM and APC strategies with advanced process metrics

Kevin Monahan, Umar Whitney

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61521E (2006) https://doi.org/10.1117/12.655894
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Most semiconductor manufacturers expect 193nm immersion lithography to remain the dominant patterning technology through the 32nm technology node. If this remains the case, the interaction of more complex designs with shrinking process windows will severely limiting parametric yield. The industry is responding with strategies based upon design for manufacturability (DFM) and multi-variate advanced process control (APC). The primary goal of DFM is to enlarge the process yield window, while the primary goal of APC is to keep the manufacturing process in that yield window. In this work, we discuss new and innovative process metrics, including simulation-based virtual metrology, that will be needed for yield at the 32nm technology node.

Citation Download Citation

Kevin Monahan and Umar Whitney "Enabling DFM and APC strategies with advanced process metrics", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521E (24 March 2006); https://doi.org/10.1117/12.655894

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