Optimization of parameters of process deep plasmachemical etching of silicon for elements MEMS

A. I. Vinogradov; N. M. Zarjankin; J. A. Mihajlov; E. P. Prokopev; S. P. Timoshenkov

doi:10.1117/12.853837

26 February 2010 Optimization of parameters of process deep plasmachemical etching of silicon for elements MEMS

A. I. Vinogradov, N. M. Zarjankin, J. A. Mihajlov, E. P. Prokopev, S. P. Timoshenkov

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210B (2010) https://doi.org/10.1117/12.853837
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

Dependences of characteristics of deep silicon etching on various process parameters are investigated. The method of planning multifactorial experiment is applied to a finding of the optimum recipes providing high selectivity to a mask and decrease of ARDE. Results of research are used by manufacturing of real MEMS structures.

Citation Download Citation

A. I. Vinogradov, N. M. Zarjankin, J. A. Mihajlov, E. P. Prokopev, and S. P. Timoshenkov "Optimization of parameters of process deep plasmachemical etching of silicon for elements MEMS", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210B (26 February 2010); https://doi.org/10.1117/12.853837

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