Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time

Christopher N. Anderson; Joe Daggett; Patrick P. Naulleau

doi:10.1117/12.848362

20 March 2010 Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time

Christopher N. Anderson, Joe Daggett, Patrick P. Naulleau

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 763617 (2010) https://doi.org/10.1117/12.848362
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In this paper, the corner rounding bias of a commercially available extreme ultraviolet photoresist is monitored as molecular weight, photoacid generator (PAG) size, and development time are varied. These experiments show that PAG size influences corner biasing while molecular weight and development time do not. Large PAGs are shown to exhibit less corner biasing, and in some cases, lower corner rounding, than small PAGs. In addition, heavier resist polymers are shown to exhibit less corner rounding than lighter ones.

Citation Download Citation

Christopher N. Anderson, Joe Daggett, and Patrick P. Naulleau "Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763617 (20 March 2010); https://doi.org/10.1117/12.848362

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available