Monitoring and control of photoresist properties and CD during photoresist processing

Geng Yang; Yit-Sung Ngo; Andi S. Putra; Kar-Tien Ang; Arthur Tay; Zhong-Ping Fang

doi:10.1117/12.846560

1 April 2010 Monitoring and control of photoresist properties and CD during photoresist processing

Geng Yang, Yit-Sung Ngo, Andi S. Putra, Kar-Tien Ang, Arthur Tay, Zhong-Ping Fang

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 763828 (2010) https://doi.org/10.1117/12.846560
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Current approaches to control critical dimensions (CD) uniformity during lithography is primarily based on run-to- run (R2R) methods where the CD is measured at the end of the process and correction is done on the next wafer (or batch of wafers) by adjusting the parameter set-points. In this work, we proposed a method to monitor the various photoresist parameters (e.g. photoresist thickness, photoactive compound) and CD in-situ and in real-time. Through modeling and real-time identification, we develop new in-situ measurement techniques for the various parameters of interest in the lithography sequence using existing available data in the manufacturing process.

Citation Download Citation

Geng Yang, Yit-Sung Ngo, Andi S. Putra, Kar-Tien Ang, Arthur Tay, and Zhong-Ping Fang "Monitoring and control of photoresist properties and CD during photoresist processing", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763828 (1 April 2010); https://doi.org/10.1117/12.846560

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